As advanced semiconductor devices continue to shrink with increasing structure complexity, it has become increasingly difficult to directly probe nanoscale circuits using nano-manipulators. In addition, contact caused by probing may affect the analysis target, necessitating new failure analysis methods.
With extensive research on the Passive Voltage Contrast (PVC) detection technology, JEOL has established a new method for stable, highly reproducible PVC observation through the advancement of detector technology and sample preparation techniques.
The HAXIS LIM (Low-angle Ion Milling) - SEM Multi Beam System is JEOL’s new semiconductor failure analysis platform that integrates these technologies. It enables clear, highly reproducible PVC imaging, even in advanced semiconductor devices. By visually detecting electrical anomalies while minimizing the effects of processing damage and contamination, LIM-SEM can efficiently locate defects and determine their root cause. The use of the inert gas argon (Ar), ensures stable surface quality while reducing the instrument operation cost.
Dr. Noureddine Anibou is the Semiconductor Business Development Manager at JEOL USA. Dr. Anibou obtained his PhD in Experimental Condensed Matter Physics from the University of Houston in 2006. For his research, his work investigated the use of different x-ray scattering techniques to evaluate the substrate effect on the crystallinity and epitaxy of NiAl films deposited on Si semiconductor substrates. He then went on to be a Professor of Physics at San Jacinto College, a Senior Applications Scientist for XRD at Rigaku Americas, and then went on to become a Senior Field Applications Manager for Semiconductor at Thermo Fisher Scientific, before starting at JEOL in 2025.
